Gunn Diodes are named after a researcher J. B. Gunn from an IBM, he discovered that the materials form group (III-V) of predict table such as Gallium arsenide (GaAs), and Indium Phosphide (InP), when applied voltage increases up to the certain value the mobility of electrons in these materials decreases, thereby producing negative differential resistance region. A diode made up of these materials can generate microwaves frequencies.

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