A PN junction is said to be forward biased when the externally applied voltage is in such a direction that it cancels the potential barrier of a diode, hence, allowing the current flow.
Category: Diode Page 1 of 2
In this article, we learn about Biasing of PN Junction in detail – like how to bias a PN junction Diode (Forward & Reverse bias methods), the behavior of PN junction during forward & reverse bias, how to plot the Voltage-Current characteristics, and many other essential concepts regarding a PN junction diode. So let’s begin.
This article is based on the Voltage Multipliers, working of Voltage doubler circuit, voltage Tripler and voltage quadruple and the applications of voltage Multiplier circuits using different waveforms and circuit.
This new article is based on the PhotoDiode? Working, Operations, and Applications.
Difference Between Diode and Transistor
Difference between Diode and Transistor is very important to understand because diode and transistor are considered as the heart of the electronic circuit. The major difference between diode and transistor is that a diode is a current controlling device which allows the current in only one direction it has two terminals and it is mostly used for converting AC into pulsating DC.
Clipper and Clamper Circuits are different with respect to their operation, circuit diagrams, and their applications and in this article we, will cover Difference Between Clipper and Clamper w.r.t their Circuits, Operations, and their Applications.
This article “Diode Clipper- Positive,Negative,Biased Positive,Combination Biased” is based on the Diode clipper circuit, working of positive and negative Diode clipper circuits, biased Positive clipper circuits, Biased Negative clipper circuit combinational biased clipper circuit and the applications of diode clipper circuits using different waveforms and circuit.
In this article, We will cover Varactor Diode also known as varicap diode, we will cover their VI Characteristics, Construction, and their practical applications step by step.
Gunn Diodes are named after a researcher J. B. Gunn from an IBM, he discovered that the materials form group (III-V) of predict table such as Gallium arsenide (GaAs), and Indium Phosphide (InP), when applied voltage increases up to the certain value the mobility of electrons in these materials decreases, thereby producing negative differential resistance region. A diode made up of these materials can generate microwaves frequencies.
BARITT Diode or commonly referred to as Barrier Injection Transit-Time Diode has many Similarities to the more widely used IMPATT DIODE. BARITT Diode is usually used for Microwave Signal Generations of frequencies up to 25Ghz for Silicon (Si) Material and 90GHz for Gallium-Arsenide (GaAs).